概要
The EVB-RTP100E1P8G1FL-DSC evaluation board demonstrates the performance advantages of low-voltage GaN technology in a high-efficiency synchronous buck converter. Featuring two RTP100E1P8G1FL-DSC 100V enhancement-mode (E-mode) gallium nitride (GaN) FETs in a half-bridge configuration and driven by the RRP68150 gate driver, the board provides a compact platform for evaluating high-frequency power conversion designs.
The board enables evaluation of switching performance, efficiency, thermal behavior, and power density across a wide range of operating conditions. Integrated test points simplify waveform measurements and power-loss analysis, helping optimize power-stage layouts and demonstrate how low-voltage GaN technology can improve next-generation power conversion systems.
特長
- Performance testing of low-voltage GaN over a wide range of operating conditions
- Flexible and user-friendly buck converter evaluation board
- Evaluate system performance using the RRP68150 gate driver
- High-frequency power conversion optimization
- Convenient test points for waveform measurement
- Supports high-efficiency, high-power-density designs
使用製品
| RRP68150 | 100V、2Aソース、5.3Aシンク、5V駆動高周波GaN/MOSFETハーフブリッジドライバ（アンチシュートスルー保護機能付き） |
サンプル＆ご購入
EVB-RTP100E1P8G1FL-DSC
アクティブビデオ&トレーニング
REXGaN 100V GaN FETs deliver ultra-fast switching, low power loss, and high-power density for next-generation power conversion applications. Built on the Renesas REXGaN platform, these e-mode GaN power transistors combine low RDS(on), advanced packaging, and enhanced thermal performance to improve system efficiency. Silicon footprint compatibility enables low-friction migration from traditional silicon-based solutions while supporting higher performance and power density.
ニュース＆ブログ
ブログ 2026年10月1日 |
