概要
説明
The EVB-RTP100E005G1FL evaluation board demonstrates the performance advantages of Renesas low-voltage GaN technology in a high-efficiency synchronous buck converter. Featuring two RTP100E005G1FL 100V enhancement-mode GaN FETs in a half-bridge configuration and driven by the RRP68150 GaN gate driver, the board provides a compact platform for evaluating high-frequency power conversion designs.
Operating from a 48V input and delivering 12V output power up to 240W, the board enables evaluation of switching performance, efficiency, and power density across a wide range of operating conditions. Integrated test points simplify switching waveform measurements and power loss analysis, helping designers optimize next-generation power conversion systems.
特長
- Performance testing of Renesas low-voltage GaN over a wide range of Vin, Vout, Fsw, and Pout
- Flexible and user-friendly buck converter evaluation board
- Supports 48V input and 12V output with up to 240W output power
- Operates across switching frequencies from 250kHz to 1MHz
- High-frequency power conversion optimization
- Convenient test points for waveform measurement
- Supports high-efficiency, high-power-density designs
- Footprint-compatible GaN FET package simplifies migration from silicon MOSFET solution
アプリケーション
ニュース＆ブログ
ブログ 2026年10月1日 |
