With increasing demands for efficiency, power density, and reliability in automotive, industrial, and robotics applications, power semiconductor technologies have evolved significantly. Gallium Nitride (GaN) and low-voltage MOSFETs are two of the most impactful innovations driving this evolution. Companies like Renesas have been at the forefront of these advancements, offering high-performance solutions tailored for these demanding sectors. Here, I want to explore the role of both GaN and MOSFETs in these applications, their benefits and challenges, and take a look at some industry-specific use cases.
Benefits of GaN and the Cascode D-Mode Architecture
GaN offers numerous advantages over traditional silicon-based devices, including higher efficiency, faster switching speeds, and superior thermal performance. These benefits stem from GaN's lower on-resistance and reduced gate charge, which contribute to lower conduction and switching losses. GaN also allows for higher frequency operation, enabling more compact and efficient power electronic designs.
One of the most effective implementations of GaN is the cascode D-mode (Depletion-mode) configuration, where a normally-on GaN High Electron Mobility Transistor (HEMT) is paired with a low-voltage silicon MOSFET to create a normally-off device.
This combination leverages GaN's high efficiency and fast switching while maintaining the ease of control using conventional silicon gate drivers. The cascode approach offers enhanced ruggedness, high-voltage operation, and compatibility with existing circuit topologies, making it a preferred solution for high-efficiency power applications. Read more in the D-mode architecture white paper.
Key Applications – Energy, EV Charging, Motor Control, and Automotive
The rise of renewable energy sources has also increased the need for portable and efficient power systems. GaN-based solutions are widely used because they enable compact, lightweight, and highly efficient USB-C power systems that enhance the viability of renewable energy integration into portable devices by offering faster charging and improved energy conversion rates.
See the 240W USB PD AC/DC Adapter solution for more details, and check out the Power Adapters and Chargers solution page for more resources.
As EV adoption accelerates, smart charging solutions are crucial for efficiency and monitoring. GaN and MOSFET-based power electronics ensure high efficiency, low heat dissipation, and fast switching speeds in these critical systems. Visit these application pages to see how this benefits X-in-1 integration and other secure, efficient, and scalable Electric & Hybrid Vehicles (EV/HEV) solutions.
Modern AI-driven motor control solutions leverage GaN and low-voltage MOSFETs for enhanced precision and efficiency. AI on the Edge is instrumental in robotics and industrial automation, enabling real-time adjustments, predictive maintenance, and improved energy efficiency. The integration of AI-based control algorithms with high-performance power devices ensures superior motor performance with reduced energy consumption. High-voltage GaN technology is revolutionizing power conversion by reducing losses and increasing power density, advancements that benefit both industrial and automotive applications where efficiency and thermal management are paramount. High-voltage GaN-based converters enable more compact, lightweight designs with superior power handling capabilities. See this in action in the 1.2kW High-Voltage GaN Inverter solution. View other high-power AC drive designs on the Motor Drives & Robotics applications page.
GaN FETs and MOSFETs play a crucial role in automotive applications by achieving minimal power losses, enhanced safety, and robust performance. In the above EV system, for example, the integration of multiple power functions into a single X-in-1 E-Axle solution significantly improves efficiency and reduces system complexity. GaN technology enhances power conversion efficiency and reduces size and weight, ultimately extending driving range and reliability, which are key factors when combining an inverter, onboard charger (OBC), DC/DC converter, and power distribution unit (PDU). Check out additional EV Charging Infrastructure solutions to learn more.
In the growing market of electric two-wheelers, an efficient 48V brushless DC (BLDC) motor control solution is essential. Low-voltage MOSFETs with optimized FOM (Figure Of Merit, RDSon x QG) enable higher switching frequencies, reduced losses, and better thermal performance, resulting in compact and lightweight powertrains with extended battery life and improved acceleration.
Conclusion
GaN and low-voltage MOSFETs are revolutionizing power electronics across multiple domains, and Renesas is driving these innovations by providing efficient, high-performance solutions for renewable energy, EV charging, motor control, and next-generation automotive architectures. With continuous advancements, these technologies will further enhance power efficiency, reliability, and integration in future industrial and automotive applications.
To learn more about GaN and MOSFET solutions from Renesas and get datasheets and samples, please check out our GaN Power Discretes and Power MOSFETs web pages. To explore all of our system solutions and block diagrams and accelerate your development cycle, visit the Applications solutions page.