Features
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- RoHS-compliant and Halogen-free packaging
- Enables AC-DC and DC-DC designs
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Achieves increased efficiency in both hard- and soft-switched circuits
- Easy to drive with commonly-used gate drivers
Description
The TP65H150G4PS 650V 150mΩ Gallium Nitride (GaN) FET is a normally-off device built using Renesas' Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Renesas GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H150G4PS is offered in an industry-standard TO-220 with a common source package configuration.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Standard |
| Vds min (V) | 650 |
| V(TR)DSS max (V) | 800 |
| RDSON (Typ) (mΩ) | 150 |
| RDSON (max) (mΩ) | 180 |
| Vth typ (V) | 4 |
| Id max @ 25°C (A) | 16 |
| Qg typ (nC) | 8 |
| Qoss (nC) | 34 |
| Ron * Qoss (FOM) | 5100 |
| Ciss (Typical) (pF) | 598 |
| Coss (Typical) (pF) | 30 |
| trr (Typical) (nS) | 31 |
| Mounting Type | Through Hole |
| Temp. Range (°C) | -55 to +150°C |
Package Options
| Pkg. Type | Lead Count (#) |
|---|---|
| TO-220 | 3 |
Application Block Diagrams
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High Efficiency ZVS 140W USB-C Power Supply
140W USB-C power supply with SuperGaN, adaptive ZVS, smart PFC, and high efficiency at 28V/5A.
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Additional Applications
- Consumer
- Power adapters
- Low-power SMPS
- Lighting