Features
- Gen IV technology
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- RoHS-compliant and Halogen-free packaging
- Achieves increased efficiency in both hard- and soft-switched circuits
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Easy to drive with commonly-used gate drivers
- Kelvin source for improved performance
- Pin-to-pin Drop-in with e-mode GaN FET
Description
The TP65H100G4LSGB 650V 92mΩ Gallium Nitride (GaN) FET is a normally-off device built using Renesas Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Renesas GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H100G4LSGB is offered in an industry-standard PQFN88 with a Kelvin source and common source package configuration.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Standard |
| Vds min (V) | 650 |
| V(TR)DSS max (V) | 800 |
| RDSON (Typ) (mΩ) | 92 |
| RDSON (max) (mΩ) | 110 |
| Vth typ (V) | 3.65 |
| Id max @ 25°C (A) | 18.9 |
| Qg typ (nC) | 14.4 |
| Qoss (nC) | 56 |
| Ron * Qoss (FOM) | 5152 |
| Ciss (Typical) (pF) | 818 |
| Coss (Typical) (pF) | 53 |
| trr (Typical) (nS) | 17 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) |
|---|---|
| PQFN88 | 8 x 8 |
Application Block Diagrams
 | Wireless Smart Blind Controller Matter-ready smart blinds with GaN power and flexible Wi-Fi or Bluetooth LE for seamless integration. |
Additional Applications
- Consumer
- Power adapters
- Low-power SMPS
- Lighting