Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | PQN88-IP, DSC |
| Pkg. Code: | PQN88-IP, DSC |
| Lead Count (#): | 10 |
| Pkg. Dimensions (mm): | 8x8 |
| Pitch (mm): |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | 3 |
| ECCN (US) | EAR99 |
| HTS (US) | 8541.29.0095 |
| RoHS (TP65H020G4PLSGBD-TR) | EnglishJapanese |
| Pb (Lead) Free |
Product Attributes
| Pkg. Type | PQN88-IP, DSC |
| Carrier Type | Tape & Reel |
| Moisture Sensitivity Level (MSL) | 3 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
| Assembly Location | China |
| Wafer Fab Location | Japan |
| Blocking Capability | Uni-Directional Switch |
| Ciss (Typical) (pF) | 1439 |
| Coss (Typical) (pF) | 196 |
| FET Type | N-Channel |
| IDS (A) @ Ta = 25°C | 92 |
| IDS (A) @ Tc = 25°C | 328 |
| Id max @ 25°C (A) | 92 |
| Lead Count (#) | 10 |
| Pkg. Dimensions (mm) | 8x8 |
| Qg typ (nC) | 19.6 |
| Qoss (nC) | 221 |
| Qualification Level | Standard |
| Quality Level | Standard |
| RDSON (Typ) (mΩ) | 20 |
| RDSON (max) (mΩ) | 25 |
| Ron * Qoss (FOM) | 221 |
| Theta-JA (°C/W) | 53 |
| V(TR)DSS max (V) | 900 |
| Vds min (V) | 650 |
| Vth typ (V) | 4 |
Resources for TP65H020G4PLSGBD
Description
The TP65H020G4PLSGBD is a 650V, 20mΩ gallium nitride (GaN) FET built on Renesas' Gen IV Plus platform. This normally-off switch combines a high-voltage depletion-mode GaN high-electron-mobility transistor (HEMT) for fast switching and high reliability with a low-voltage silicon metal-oxide-semiconductor field-effect transistor (MOSFET) for compatibility with standard gate drivers.
Available in a thin PQFN 8x8 package with dual-side cooling, the TP65H020G4PLSGBD delivers enhanced thermal performance and supports high system-level power density. Its low gate charge, low output charge, negligible reverse recovery charge, and soft- and hard-switching capabilities help improve power-conversion efficiency while reducing system size, weight, and cost.