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Features

  • VDSS = 100V
  • Standard-level gate drive voltage: VGS(th) = 2.0V ~ 4.0V
  • Super low on-state resistance: RDS(on) = 1.5mΩ max.
  • ID = 340A
  • Low input capacitance
  • Low thermal resistance
  • 100% Avalanche tested
  • Pb-free lead plating: RoHS compliant
  • MSL1 classified according to IPC/JEDEC J-STD-020

Description

The RBE015N10R1SZPW N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a TOLT package. The TOLT package features top-side cooling for thermal performance, reliability, and ease of assembly.

Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.

Parameters

AttributesValue
Qualification LevelIndustrial
Nch/PchNch
Channels (#)1
Standard Pkg. TypeTOLT
Gate LevelStandard
VDSS (Max) (V)100
ID (A)340
RDS (ON) (Max) @10V (mohm)1.5
Pch (W)468
Ciss (Typical) (pF)13000
Qg typ (nC)170
Series NameREXFET-1

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
TOLT15 x 9.9 x 2.316

Product Comparison

RBE015N10R1SZPWRBE015N10R1SZPVRBE015N10R1SZQ4RBA015N10R1SBPW
VDSS (Max) (V)100100100100
RDS (ON) (Max) @10V (mohm)1.51.51.51.5
ID (A)340340340340
Standard Pkg. TypeTOLTTOLGTOLLTOLT
Qualification LevelIndustrialIndustrialIndustrialAutomotive

Applications

  • Motor control
  • Data center
  • Energy infrastructure
  • Industrial automation
  • DC/DC power conversion
  • Power tools
  • Robotics

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