Features
- VDSS = 80V
- Standard-level gate drive voltage: VGS(th) = 2.0V ~ 4.0V
- Super low on-state resistance: RDS(on) = 1.3mΩ max.
- ID = 340A
- Low input capacitance
- Pb-free lead plating: RoHS compliant
- MSL1 classified according to IPC/JEDEC J-STD-020
Description
The RBE013N08R1SZPW N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a TOLT package. The TOLT package features top-side cooling for thermal performance, reliability, and ease of assembly.
Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Industrial |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | TOLT |
| Gate Level | Standard |
| VDSS (Max) (V) | 80 |
| ID (A) | 340 |
| RDS (ON) (Max) @10V (mohm) | 1.3 |
| Pch (W) | 468 |
| Ciss (Typical) (pF) | 14000 |
| Qg typ (nC) | 185 |
| Series Name | REXFET-1 |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| TOLT | 9.90 x 15.00 x 2.30 | 16 |
Product Comparison
| RBE013N08R1SZPW | RBA013N08R1SBPW | RBE011N08R1SZPW | |
| VDSS (Max) (V) | 80 | 80 | 80 |
| RDS (ON) (Max) @10V (mohm) | 1.3 | 1.3 | 1.06 |
| ID (A) | 340 | 340 | 360 |
| Standard Pkg. Type | TOLT | TOLT | TOLT |
| Qualification Level | Industrial | Automotive | Industrial |
Applications
- Motor control
- DC/DC power conversion
- Industrial automation
- Data center
- Energy infrastructure
- Power tools
- Robotics