Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | Bare |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | |
| Pitch (mm): |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | |
| ECCN (US) | EAR99 |
| HTS (US) | 8541.29.0040 |
| RoHS (RBA500N10EHWT-2UA01#GFH) | EnglishJapanese |
| Pb (Lead) Free | Yes |
Product Attributes
| Pkg. Type | Bare |
| Standard Pkg. Type | Bare die |
| Carrier Type | Embossed Tape |
| Automotive Qual. | _none |
| Channels (#) | 1 |
| Ciss (Typical) (pF) | 34000 |
| Country of Assembly | JAPAN |
| Country of Wafer Fabrication | JAPAN |
| Function | Power MOSFETs |
| Gate Level | Standard |
| ID (A) | 500 |
| Id max @ 25°C (A) | 500 |
| Lead Compliant | Yes |
| MOQ | 1 |
| Nch/Pch | Nch |
| Pb (Lead) Free | Yes |
| Qg typ (nC) | 450 |
| Qualification Level | Automotive |
| RDS (ON) (Typical) @ 10V / 8V (mohm) | 0.54 |
| Series Name | REXFET-1 |
| Simulation Model Available | Yes |
| Tape & Reel | Yes |
| Thickness (mm) | 1 |
| VDSS (Max) (V) | 100 |
| VGSS (V) | 20 |
| Vgs (off) (Max) (V) | 4 |
Resources for RBA500N10EHWT-2UA01
Description
The REXFET-1 100V technology, featuring a split gate structure, offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to offer high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for Automotive applications such as power management systems, motor control, and DC-DC converters.
