Features
- Standard level gate drive voltage: VGS(th) = 2.0V to 4.0V
- Super low on-state resistance: RDS(on) = 0.65mΩ max
- Low input capacitance
- Designed for automotive application and AEC-Q101 (HTRB, HTGB) qualified
Description
The REXFET-1 100V technology, featuring a split gate structure, offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to offer high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for Automotive applications such as power management systems, motor control, and DC-DC converters.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | Bare die |
| VDSS (Max) (V) | 100 |
| ID (A) | 500 |
| Ciss (Typical) (pF) | 34000 |
| Qg typ (nC) | 450 |
| Series Name | REXFET-1 |
Package Options
| Pkg. Type |
|---|
| Bare |
Application Block Diagrams
|
3-Phase RISC-V Motor Controller
3-phase motor controller with pre-programmed 32-bit RISC-V ASSP.
|