Features
- VDSS = 80V
- Standard-level gate drive voltage: VGS(th) = 2.0V to 4.0V
- Super low on-state resistance: RDS(on) = 1.06mΩ max.
- ID(DC) = 360A
- Low input capacitance
- Low thermal resistance
- 100% Avalanche tested
- AEC-Q101 qualified
- Production Part Approval Process (PPAP) capable
- Pb-free lead plating: RoHS compliant
- MSL1 classified according to IPC/JEDEC J-STD-020
Description
The RBA011N08R1SBPW n-channel power MOSFET features REXFET‑1 split‑gate technology and is available in a TOLT package. The TOLT package uses gullwing‑type leads to provide strong resistance to thermal stress and incorporates a top‑side cooling structure that enhances system‑level heat dissipation.
Renesas’ REXFET‑1 split‑gate technology is well‑suited for applications requiring low RDS(on) and high switching performance, making it ideal for high‑power and high‑frequency applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | TOLT |
| Gate Level | Standard |
| VDSS (Max) (V) | 80 |
| ID (A) | 360 |
| RDS (ON) (Max) @10V (mohm) | 1.06 |
| Pch (W) | 535 |
| Ciss (Typical) (pF) | 18000 |
| Qg typ (nC) | 250 |
| Series Name | REXFET-1 |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| TOLT | 9.90 x 15.00 x 2.30 | 16 |
Applications
- 48V Battery System and Motor Drive
- Small Traction (2-Wheel, 3-Wheel Vehicle)
- Onboard Charger (OBC)
- Charging Station
- Low Voltage DC/DC