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Features

  • Super low on-state resistance RDS(on)1 = 9.6 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 15 mΩ MAX. (VGS = −4.5 V, ID = −25 A)
  • Low input capacitance
  • Gate to Source ESD protection diode built-in

Description

The NP50P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Parameters

AttributesValue
Qualification LevelAutomotive
Nch/PchPch
Channels (#)1
Standard Pkg. TypeTO-252 / DPAK
Gate LevelLogic
VDSS (Max) (V)-40
ID (A)-50
RDS (ON) (Max) @10V (mohm)9.6
RDS (ON) (Max) @4.5V (mohm)15
Pch (W)84
Ciss (Typical) (pF)3800
Qg typ (nC)100
Series NameNP Series

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
MP-3ZK6 x 6 x 2.653
Part NumberStatusSamplesStockPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) FreeCountry of AssemblyCountry of Wafer Fabrication
NP50P04SLG-E1-AYActiveAvailableIn StockMP-3ZK1ku | $0.9073#Embossed Tape1YesMALAYSIAJAPAN
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