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Features

  • Super low on-state resistance RDS(on)1 = 29.5 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 37.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A)
  • Low input capacitance Ciss = 3100 pF TYP.

Description

The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Parameters

AttributesValue
Qualification LevelAutomotive
Nch/PchPch
Channels (#)1
Standard Pkg. TypeTO-263 / D2PAK
Gate LevelLogic
VDSS (Max) (V)-60
ID (A)-36
RDS (ON) (Max) @10V (mohm)29.5
RDS (ON) (Max) @4.5V (mohm)37.5
Pch (W)56
Ciss (Typical) (pF)3100
Qg typ (nC)54
Series NameNP Series

Package Options

Pkg. TypeLead Count (#)
MP-25ZK3
Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) FreeCountry of AssemblyCountry of Wafer Fabrication
NP36P06KDG-E1-AYActiveAvailableIn StockContactMP-25ZK1ku | $0.8083#Embossed Tape1YesMALAYSIAJAPAN
NP36P06KDG-E2-AYObsoleteN/AOut of StockRoHS:EN
RoHS:JA
MP-25ZK3#Embossed Tape1Yes
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