Features
- High Efficiency Integrated Synchronous Buck Regulator with up to 95% Efficiency
- 2.7V to 6.0V Supply Voltage
- 2.4MHz PWM Switching Frequency
- 500mA Guaranteed Output Current
- 3% Output Accuracy Over-Temperature and Line for Fixed Output Options
- 20µA Quiescent Supply Current in Skip Mode
- Less than 1µA Logic Controlled Shutdown Current
- 100% Maximum Duty Cycle for Lowest Dropout
- Ultrasonic Switching Frequency at Skip Mode to Prevent Audible Frequency Noise (For ISL9103A Only)
- Discharge Output Capacitor when Disabled
- Internal Digital Soft-Start
- Peak Current Limiting, Short Circuit Protection
- Over-Temperature Protection
- Chip Enable
- Small 6 Pin 1.6mmx1.6mm UTDFN Package
- Pb-Free (RoHS Compliant)
ISL9103A Functional Diagram
Description
The ISL9103, ISL9103A is a 500mA, 2. 4MHz step-down regulator, which is ideal for powering low-voltage microprocessors in compact devices such as PDAs and cellular phones. It is optimized for generating low output voltages down to 0. 8V. The supply voltage range is from 2. 7V to 6V allowing the use of a single Li+ cell, three NiMH cells or a regulated 5V input. It has guaranteed minimum output current of 500mA. A high switching frequency of 2. 4MHz pulse-width modulation (PWM) allows using small external components. Under light load condition, the device operates at low IQ skip mode with typical 20µA quiescent current for highest light load efficiency to maximize battery life, and it automatically switches to fixed frequency PWM mode under heavy load condition. The ISL9103, ISL9103A includes a pair of low ON-resistance P-Channel and N-Channel internal MOSFETs to maximize system efficiency and minimize the external component count. 100% duty-cycle operation allows less than 300mV dropout voltage at 500mA. The ISL9103, ISL9103A offers internal digital soft-start, enable for power sequence, overcurrent protection and thermal shutdown functions. In addition, the ISL9103, ISL9103A offers a quick bleeding function that discharges the output capacitor when the IC is disabled. The ISL9103, ISL9103A is offered in a 1. 6x1. 6mm UTDFN package. The complete converter occupies less than 0. 5cm2.
Application Block Diagrams
 | Power Sequencer & I/O Expander for Printers (PPC/MFP) An MCU-based power sequencer and I/O expander for high-performance PPC/MFP printers. |
Additional Applications
- Single Li-ion Battery-Powered Equipment
- Mobile Phones and MP3 Players
- PDAs and Palmtops
- WCDMA Handsets
- Portable Instruments
| Part Number | Status | Samples | Stock | RoHS | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pb (Lead) Free | Pb Free Category | Temp. Range (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|
| ISL9103AIRUAZ-T | Obsolete | N/A | In Stock | RoHS:EN | uTDFN | 6# | Reel | 1 | Yes | Nickel/Palladium/Gold-e4 | -40 to +85°C |
| ISL9103AIRUBZ-T | Obsolete | N/A | In Stock | RoHS:EN | uTDFN | 6# | Reel | 1 | Yes | Nickel/Palladium/Gold-e4 | -40 to +85°C |
| ISL9103AIRUCZ-T | Obsolete | N/A | In Stock | RoHS:EN | uTDFN | 6# | Reel | 1 | Yes | Nickel/Palladium/Gold-e4 | -40 to +85°C |
| ISL9103AIRUDZ-T | Obsolete | N/A | Out of Stock | RoHS:EN | uTDFN | 6# | Reel | 1 | Yes | Nickel/Palladium/Gold-e4 | -40 to +85°C |
| ISL9103AIRUFZ-T | Obsolete | N/A | Out of Stock | RoHS:EN | uTDFN | 6# | Reel | 1 | Yes | Nickel/Palladium/Gold-e4 | -40 to +85°C |
| ISL9103AIRUJZ-T | Obsolete | N/A | Out of Stock | RoHS:EN | uTDFN | 6# | Reel | 1 | Yes | Nickel/Palladium/Gold-e4 | -40 to +85°C |
| ISL9103AIRUWZ-T | Obsolete | N/A | Out of Stock | RoHS:EN | uTDFN | 6# | Reel | 1 | Yes | Nickel/Palladium/Gold-e4 | -40 to +85°C |
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- Model - iSim
- Application NotePDF 592 KB an9208 Feb 01, 2018AI-generated Summary: The document discusses high frequency power converters, focusing on ZVS-QRC and multi-resonant topologies that reduce switching losses by operating switches at zero voltage. It highlights challenges like EMI and high voltage stress. The SEPIC converter is introduced, explaining its ability to buck or boost voltage without polarity inversion. The document details SEPIC’s operating modes, voltage-current relationships, and the importance of inductor values for continuous or discontinuous conduction modes.
- Product Change NoticePDF 205 KB PCN10114 Nov 10, 2010
- Application NotePDF 397 KB an1684 Jan 19, 2004AI-generated Summary: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- Application NotePDF 509 KB an1681 Jan 19, 2004AI-generated Summary: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- Application NotePDF 650 KB an9210 Dec 21, 2001AI-generated Summary: This document presents a new PSPICE subcircuit model for power MOSFETs with global temperature options. It details synchronous rectifier circuit operation, including gate biasing and conduction modes. The model accurately simulates switching waveforms, diode recovery, and temperature-dependent efficiency. Measured and modeled data show excellent correlation for output characteristics, threshold voltage, breakdown voltage, and on-resistance across temperature ranges. Limitations in linear mode modeling are noted due to PSPICE assumptions.
- Application NotePDF 387 KB an9209 Aug 13, 1998AI-generated Summary: The document presents an empirical SPICE-2 subcircuit model for power MOSFETs, accurately simulating static and dynamic behaviors including first and third-quadrant operations and avalanche breakdown. The model aligns closely with measured data and is compatible with all SPICE versions without code modification. It uses parameters derived from datasheets or simple measurements. The document also includes detailed comparisons of measured and calculated curves for transfer, output, switching, and diode recovery characteristics. Additionally, it provides legal and usage disclaimers from Renesas Electronics.
- Application NotePDF 349 KB an7244 Aug 12, 1998AI-generated Summary: Power MOSFETs feature a positive temperature coefficient of resistance, enhancing stability and preventing thermal runaway by increasing resistance as temperature rises. Their gate terminals have extremely high input impedance with minimal leakage current, dominated by capacitive characteristics. Switching speed depends on gate resistance and capacitance, with polysilicon gates offering higher resistance and lower frequency operation than metal gates. MOSFETs require a gate-to-source voltage exceeding a threshold (around 2V) and typically about 10V to fully saturate and deliver maximum drain current. TTL and CMOS drivers differ in voltage capability and switching speed, often requiring buffering for optimal performance.
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- Application NotePDF 592 KB an9208 Feb 01, 2018AI-generated Summary: The document discusses high frequency power converters, focusing on ZVS-QRC and multi-resonant topologies that reduce switching losses by operating switches at zero voltage. It highlights challenges like EMI and high voltage stress. The SEPIC converter is introduced, explaining its ability to buck or boost voltage without polarity inversion. The document details SEPIC’s operating modes, voltage-current relationships, and the importance of inductor values for continuous or discontinuous conduction modes.
- Application NotePDF 397 KB an1684 Jan 19, 2004AI-generated Summary: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- Application NotePDF 509 KB an1681 Jan 19, 2004AI-generated Summary: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- Application NotePDF 650 KB an9210 Dec 21, 2001AI-generated Summary: This document presents a new PSPICE subcircuit model for power MOSFETs with global temperature options. It details synchronous rectifier circuit operation, including gate biasing and conduction modes. The model accurately simulates switching waveforms, diode recovery, and temperature-dependent efficiency. Measured and modeled data show excellent correlation for output characteristics, threshold voltage, breakdown voltage, and on-resistance across temperature ranges. Limitations in linear mode modeling are noted due to PSPICE assumptions.
- Application NotePDF 387 KB an9209 Aug 13, 1998AI-generated Summary: The document presents an empirical SPICE-2 subcircuit model for power MOSFETs, accurately simulating static and dynamic behaviors including first and third-quadrant operations and avalanche breakdown. The model aligns closely with measured data and is compatible with all SPICE versions without code modification. It uses parameters derived from datasheets or simple measurements. The document also includes detailed comparisons of measured and calculated curves for transfer, output, switching, and diode recovery characteristics. Additionally, it provides legal and usage disclaimers from Renesas Electronics.View More (6)
Application Notes & White Papers (6)
- Product Change NoticePDF 205 KB PCN10114 Nov 10, 2010
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