Features
- Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU)
- RF range: 500MHz to 6500MHz
- Noise figure = 2.2dB at 4200MHz
- Gain = 16.6dB at 4200MHz
- OIP3 = +38.4dBm at 4200MHz
- Output P1dB = +21.5dBm at 4200MHz
- Near-constant gain versus temperature
- 3.3V or 5V power supply ICC = 40mA to 60mA
- TID Radiation Lot Acceptance Testing (RLAT) (LDR: ≤ 10mrad(Si)/s):
- ISL74324M30RZ: 30krad(Si)
- ISL74324M50RZ: 50krad(Si)
- SEE Characterization:
- No DSEE with VCC = 5.5V, ICC = 75mA, and RF input power = 22dBm at 43MeV·cm2/mg
- SET cross-section ~340μm2 at 48MeV·cm2/mg passes
- 3mm x 3mm, 16-QFN package
Description
The ISL74324M is a radiation tolerant 500MHz to 6500MHz SiGe BiCMOS high-gain broadband radio-frequency (RF) amplifier. The combination of a low noise figure (NF) and high linearity performance allows the device to be used in both receiver and transmitter applications.
The ISL74324M operates with a single 5V or 3.3V power supply using a nominal 60mA. With a supply voltage of 5V, the ISL74324M provides 16.6dB gain with +38.4dBm OIP3 and 2.2dB noise figure at 4200. Additionally, it is bias adjustable and can be operated as low as at 40mA for improved efficiency. This device incorporates a convenient shutdown capability through the STBY pin.
The ISL74324M is packaged in a 3mm x 3mm, 16-pin QFN with 50Ω single-ended RF input and output impedances for ease of integration into the signal path.
Parameters
| Attributes | Value |
|---|---|
| Frequency Range (MHz) | 500 - 6500 |
| Gain (dB) | 16.6 |
| Noise Figure (dB) | 2.2 |
| OP1dB (dBm) | 21.5 |
| Input Supply Range (V) | 3.15 - 5.25 |
| TID LDR (krad(Si)) | 30, 50 |
| DSEE (MeV·cm2/mg) | 43 |
| Temp. Range (°C) | -55 to +105°C |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) | Pitch (mm) |
|---|---|---|---|
| QFN | 3.0 x 3.0 x 0.90 | 16 | 0.5 |
Applications
- L-Band, S-Band Rx/Tx satellite chains
- Satellite IF Rx/Tx chains
| Part Number | Status | Samples | Stock | Package | TID LDR (krad(Si)) | Frequency Range (MHz) | Gain (dB) | Noise Figure (dB) | OP1dB (dBm) | Input Supply Range (V) | DSEE (MeV·cm2/mg) | Lead Count (#) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ISL74324M30RZ | Active | Available | Out of Stock | QFN | 30 | 500 - 6500 | 16.6dB | 2.2dB | 21.5dBm | 3.15 - 5.25 | 43 | 16# |
| ISL74324M50RZ | Active | N/A | Out of Stock | QFN | 50 | 500 - 6500 | 16.6dB | 2.2dB | 21.5dBm | 3.15 - 5.25 | 43 | 16# |
- Technical BriefPDF 344 KB R34TB0004EU0104 Rev.1.04 Mar 13, 2026
- DatasheetISL74324M DatasheetRECOMMENDEDPDF 5.83 MB R34DS0031EU0100 Rev.1.00 Dec 02, 2025The ISL74324M is a radiation-tolerant 500MHz to 6500MHz SiGe BiCMOS high-gain broadband radio-frequency (RF) Amplifier. This document describes the main design and operational characteristics of ISL74324M, including pin information, specifications, functional description, and packaging.
- ReportPDF 434 KB R34TR0071EU0100 Rev.1.00 Nov 07, 2025The ISL74324M is a 500MHz to 6500MHz SiGe BiCMOS High-Gain Broadband RF Amplifier. This report documents the results of 1MeV equivalent neutron testing of the ISL74324M.
- Model - S-parameterZIP 492 KB May 22, 2024The ISL74324M is a radiation tolerant 500MHz to 6500MHz SiGe BiCMOS high-gain broadband radio-frequency (RF) amplifier that can be used in both receiver and transmitter applications. This S-parameter model allows the user to evaluate the small-signal RF performance of this device, including gain, isolation, and return losses at varying bias points.
- Application NotePDF 224 KB an9654 May 05, 1999AI-generated Summary: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
- DatasheetISL74324M DatasheetRECOMMENDEDPDF 5.83 MB R34DS0031EU0100 Rev.1.00 Dec 02, 2025The ISL74324M is a radiation-tolerant 500MHz to 6500MHz SiGe BiCMOS high-gain broadband radio-frequency (RF) Amplifier. This document describes the main design and operational characteristics of ISL74324M, including pin information, specifications, functional description, and packaging.
Recommended Documents (1)
- DatasheetISL74324M DatasheetRECOMMENDEDPDF 5.83 MB R34DS0031EU0100 Rev.1.00 Dec 02, 2025The ISL74324M is a radiation-tolerant 500MHz to 6500MHz SiGe BiCMOS high-gain broadband radio-frequency (RF) Amplifier. This document describes the main design and operational characteristics of ISL74324M, including pin information, specifications, functional description, and packaging.
Datasheets (1)
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- Application NotePDF 224 KB an9654 May 05, 1999AI-generated Summary: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
Application Notes & White Papers (1)
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- Technical BriefPDF 344 KB R34TB0004EU0104 Rev.1.04 Mar 13, 2026
- ReportPDF 434 KB R34TR0071EU0100 Rev.1.00 Nov 07, 2025The ISL74324M is a 500MHz to 6500MHz SiGe BiCMOS High-Gain Broadband RF Amplifier. This report documents the results of 1MeV equivalent neutron testing of the ISL74324M.
Other (2)
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Renesas Boards & Kits
Radiation Tolerant 500MHz to 6.5GHz RF Amplifier Evaluation Board
The ISL74324MEVAL1Z evaluation board provides a quick way to evaluate the ISL74324 radiation tolerant RF amplifier. The board provides access to the STBY pins and to the RSET pins. Therefore, the standby functionality can be evaluated. With access to the RSET pin, the user can change the bias... Read More