Features
- Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU)
- RF range: 500MHz to 6500MHz
- Noise figure = 2.2dB at 4200MHz
- Gain = 16.6dB at 4200MHz
- OIP3 = +38.4dBm at 4200MHz
- Output P1dB = +21.5dBm at 4200MHz
- Near-constant gain versus temperature
- 3.3V or 5V power supply ICC = 40mA to 60mA
- TID Radiation Lot Acceptance Testing (RLAT) (LDR: ≤ 10mrad(Si)/s):
- ISL74324M30RZ: 30krad(Si)
- ISL74324M50RZ: 50krad(Si)
- SEE Characterization:
- No DSEE with VCC = 5.5V, ICC = 75mA, and RF input power = 22dBm at 43MeV·cm2/mg
- SET cross-section ~340μm2 at 48MeV·cm2/mg passes
- 3mm x 3mm, 16-QFN package
Description
The ISL74324M is a radiation tolerant 500MHz to 6500MHz SiGe BiCMOS high-gain broadband radio-frequency (RF) amplifier. The combination of a low noise figure (NF) and high linearity performance allows the device to be used in both receiver and transmitter applications.
The ISL74324M operates with a single 5V or 3.3V power supply using a nominal 60mA. With a supply voltage of 5V, the ISL74324M provides 16.6dB gain with +38.4dBm OIP3 and 2.2dB noise figure at 4200. Additionally, it is bias adjustable and can be operated as low as at 40mA for improved efficiency. This device incorporates a convenient shutdown capability through the STBY pin.
The ISL74324M is packaged in a 3mm x 3mm, 16-pin QFN with 50Ω single-ended RF input and output impedances for ease of integration into the signal path.
Parameters
| Attributes | Value |
|---|---|
| Frequency Range (MHz) | 500 - 6500 |
| Gain (dB) | 16.6 |
| Noise Figure (dB) | 2.2 |
| OP1dB (dBm) | 21.5 |
| Input Supply Range (V) | 3.15 - 5.25 |
| TID LDR (krad(Si)) | 30, 50 |
| DSEE (MeV·cm2/mg) | 43 |
| Temp. Range (°C) | -55 to +105°C |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) | Pitch (mm) |
|---|---|---|---|
| QFN | 3.0 x 3.0 x 0.90 | 16 | 0.5 |
Applications
- L-Band, S-Band Rx/Tx satellite chains
- Satellite IF Rx/Tx chains