Features
- Pin-to-pin Compatible with HIP6601 SOIC family
- Dual MOSFET Drives for Synchronous Rectified Bridge
- Low VCC Rising Threshold (7V) for IBA Applications.
- Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- Auto-zero of rDS(ON) Conduction Offset Effect
- Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
- 36V Internal Bootstrap Schottky Diode
- Bootstrap Capacitor Overcharging Prevention
- Supports High Switching Frequency (up to 2MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
- Three-State PWM Input for Output Stage Shutdown
- Three-State PWM Input Hysteresis for Applications With Power Sequencing Requirement
- Pre-POR Overvoltage Protection
- VCC Undervoltage Protection
- Expandable Bottom Copper Pad for Enhanced Heat Sinking
- Dual Flat No-Lead (DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile
- Pb-Free (RoHS Compliant)
Description
Support is limited to customers who have already adopted these products.
The ISL6612B and ISL6613B are high frequency MOSFET drivers specifically designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. These drivers combined with HIP63xx or ISL65xx Multi-Phase Buck PWM controllers and N-Channel MOSFETs form complete core-voltage regulator solutions for advanced microprocessors. The ISL6612B drives the upper gate to above rising VCC POR (7V), while the lower gate can be independently driven over a range from 5V to 12V. The ISL6613B drives both upper and lower gates over a range of 5V to 12V. This drivevoltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. These drivers are optimized for POL DC/DC Converters for IBA Systems. An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead time. These products add an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the microprocessor if the upper MOSFET(s) is shorted during initial start-up. These drivers also feature a three-state PWM input which, working together with Intersil’s multi-phase PWM controllers, prevents a negative transient on the output voltage when the output is shut down. This feature eliminates the Schottky diode that is used in some systems for protecting the load from reversed output voltage events.
Applications
- Optimized for POL DC/DC Converters for IBA Systems
- Core Regulators for Intel® and AMD® Microprocessors
- High Current DC/DC Converters
- High Frequency and High Efficiency VRM and VRD
| Part Number | Status | Samples | Stock | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pitch (mm) | Pkg. Dimensions (mm) | Pb (Lead) Free | Pb Free Category | Temp. Range (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ISL6612BCBZ | Obsolete | N/A | In Stock | SOIC | 8# | Tube | 3 | 1.3mm | 4.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C |
| ISL6612BCBZ-T | Obsolete | N/A | Out of Stock | SOIC | 8# | Reel | 3 | 1.3mm | 4.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C |
| ISL6612BCRZ | Obsolete | N/A | In Stock | DFN | 10# | Tube | 3 | 0.5mm | 3.0 x 3.0 x 0.90 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C |
| ISL6612BCRZ-T | Obsolete | N/A | Out of Stock | DFN | 10# | Reel | 3 | 0.5mm | 3.0 x 3.0 x 0.90 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C |
| ISL6612BIRZ | Obsolete | N/A | In Stock | DFN | 10# | Tube | 2 | 0.5mm | 3.0 x 3.0 x 0.90 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
| ISL6612BIRZ-T | Obsolete | N/A | Out of Stock | DFN | 10# | Reel | 2 | 0.5mm | 3.0 x 3.0 x 0.90 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
Filters
Applied Filters
- Product AdvisoryPDF 106 KB PA16061 Jun 08, 2016
- Product Change NoticePDF 398 KB PCN15046 Jan 07, 2016
- Product Change NoticePDF 108 KB PCN12068 Aug 21, 2012
- Product Change NoticePDF 248 KB PCN10055 Jun 30, 2010
- Application NotePDF 397 KB an1684 Jan 19, 2004AI-generated Summary: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- Application NotePDF 509 KB an1681 Jan 19, 2004AI-generated Summary: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- Application NotePDF 576 KB an1116 Jan 05, 2004AI-generated Summary: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
- DocumentPDF 562 KB tb417 Dec 11, 2003
- DocumentPDF 293 KB tb363 May 04, 2018
Recommended Documents (1)
Datasheets (1)
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- Application NotePDF 397 KB an1684 Jan 19, 2004AI-generated Summary: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- Application NotePDF 509 KB an1681 Jan 19, 2004AI-generated Summary: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- Application NotePDF 576 KB an1116 Jan 05, 2004AI-generated Summary: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
Application Notes & White Papers (3)
- Product AdvisoryPDF 106 KB PA16061 Jun 08, 2016
- Product Change NoticePDF 398 KB PCN15046 Jan 07, 2016
- View More (7)
Product Notices (PCN, EOL, etc) (7)
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- DocumentPDF 293 KB tb363 May 04, 2018
- DocumentPDF 562 KB tb417 Dec 11, 2003
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