Overview
Description
The ISL70040SEHEV2Z evaluation platform is used to evaluate the ISL70040SEH radiation hardened low-side Gallium Nitride (GaN) FET driver alongside the ISL70023SEH N-channel enhancement mode GaN power transistor. The same board can be used to evaluate the ISL73040SEH radiation hardened low-side GaN FET driver alongside the ISL73023SEH N-channel enhancement mode GaN power transistor, which are the same die offered with different radiation assurance screening.
The ISL70040SEH is designed to drive enhancement-mode GaN FETs in isolated topologies and boost-type configurations. It operates across a 4.5V to 13.2V supply range and supports both non-inverting and inverting gate drive within a single device.
The ISL70040SEH features a regulated 4.5V gate drive voltage (VDRV), undervoltage lockout (UVLO) protection, and 14.7V-tolerant inputs for direct connection to most PWM controllers. Split outputs enable independent adjustment of turn-on and turn-off speeds.
The ISL70023SEH 100V N-channel enhancement-mode GaN power transistor features low rDS(ON), low QG, and zero QRR for efficient high-frequency switching and reduced solution size.
Features
- Wide VDD range single
- 4.5V to 13.2V
- Location provided for load resistors to switch the GaN FET with a load
- SMA connector on the gate drive voltage to analyze the gate waveforms
- Drain/Source sense test points to analyze the drain to source waveforms
- Banana jack connectors for power supplies and drain/source connections
Applications
Videos & Training
Renesas, a leading solution provider in the satellite and high-reliability industry, introduces its Gallium Nitride (GaN) technology with the ISL70024SEH and ISL70040SEH. Designed specifically for space applications, it delivers reliable performance under total ionizing dose (TID) and heavy ion exposure. Paired with a Renesas GaN driver and FET, it enables more efficient switching, higher frequency operation, reduced gate drive voltage, and a smaller solution size compared to traditional silicon devices.
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