Overview

Features

  • Optimized for current resonance application
  • Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
  • Built in fast recovery diode in one package
  • Trench gate and thin wafer technology
  • High-Speed switching tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 30 A, Rg = 10 Ω, Ta = 25°C, Inductive load)
  • Low tail loss Etail = 160 μJ typ. (at VCC = 300 V, VGE = 20 V, IC = 50 A, Rg = 15 Ω, Tc = 125°C, current resonance circuit)

Applications

Documentation

Document title Document type
Type
Date Date
PDF 185 KB Datasheet
PDF 648 KB 日本語 Application Note
PDF 506 KB 日本語 Application Note
PDF 941 KB 日本語 Application Note
PDF 1.05 MB 日本語 Application Note
PDF 4.91 MB 日本語 Brochure
PDF 1.92 MB Brochure
PDF 1.32 MB Brochure
8 items

Design & Development

Models

Support