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IGBT 600V 30A TO-247A Built-In FRD

Package Information

Lead Count (#) 3
Pkg. Type TO-247A
Pkg. Code pkg_8818

Environmental & Export Classifications

Moisture Sensitivity Level (MSL) 1
Pb (Lead) Free Yes
ECCN (US) EAR99
RoHS (RJH60T04DPQ-A1#T0) EnglishJapanese
HTS (US)

Product Attributes

Pkg. Type TO-247A
Lead Count (#) 3
Carrier Type Tube
Moisture Sensitivity Level (MSL) 1
Pb (Lead) Free Yes
Price (USD) | 1ku 6.615
Application IH Cooker
Channels (#) 1
Configuration Built-In FRD
FRD Vf (V) 1.2
FRD trr (ns) 100
IC @100 °C (A) 30
IC @25 °C (A) 60
Ic (Peak) (A) 180
Lead Compliant Yes
MOQ 1
Mounting Type Through Hole
Pc (W) 208.3
Pch (W) 208.3
Qualification Level Industrial
Series Name 60T0x Series
Simulation Model Available Yes
Tape & Reel No
VCE (sat) (V) 1.5
VCES (V) 600
VDSS (Max) (V) 600
tf (Typical) (µs) 0.045

Description

The RJH60T04DPQ-A1 600V, 30A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for current resonance circuit applications. It is available in a TO-247A package type.