Features
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- Enables AC-DC and DC-DC designs
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Achieves increased efficiency in both hard- and soft-switched circuits
- Easy to drive with commonly-used gate drivers
- RoHS-compliant and Halogen-free packaging
Description
The TP65H70G4PS 650V 72mΩ Gallium Nitride (GaN) FET is a normally-off device built using our Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Renesas' GaN power products offer improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H070G4PS is offered in an industry-standard TO-220 with a common source package configuration.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Standard |
| Vds min (V) | 650 |
| V(TR)DSS max (V) | 800 |
| RDSON (Typ) (mΩ) | 72 |
| RDSON (max) (mΩ) | 85 |
| Vth typ (V) | 4 |
| Id max @ 25°C (A) | 29 |
| Qrr typ (nC) | 0 |
| Qg typ (nC) | 9 |
| Qoss (nC) | 80 |
| Ron * Qoss (FOM) | 5760 |
| Ciss (Typical) (pF) | 638 |
| Coss (Typical) (pF) | 72 |
| trr (Typical) (nS) | 80 |
| Mounting Type | Through Hole |
| Temp. Range (°C) | -55 to +150°C |
Package Options
| Pkg. Type | Lead Count (#) |
|---|---|
| TO-220 | 3 |
Application Block Diagrams
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High efficiency 240W AC/DC adapter with USB PD 3.2 EPR output.
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500W Onboard Battery Charger for 2-Wheeler EV
High-efficiency AC/DC battery charger with GaN FETs and MCU for CAN communication and battery health.
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Additional Applications
- Datacom
- Broad industrial
- PV inverter
- Servo motor
- Computing
- Consumer