パッケージ情報
| CADモデル: | View CAD Model |
| Pkg. Type: | TO-220FPA |
| Pkg. Code: | pkg_11786 |
| Lead Count (#): | 3 |
| Pkg. Dimensions (mm): | |
| Pitch (mm): |
環境及び輸出分類情報
| Pb (Lead) Free | Yes |
| Moisture Sensitivity Level (MSL) | |
| ECCN (US) | |
| HTS (US) |
製品スペック
| Pkg. Type | TO-220FPA |
| Lead Count (#) | 3 |
| Carrier Type | Tube |
| Pb (Lead) Free | Yes |
| Application | Inverter |
| Channels (#) | 1 |
| Configuration | Built-in FRD |
| FRD Vf (V) | 1.2 |
| FRD trr (ns) | 100 |
| IC @100 °C (A) | 12 |
| IC @25 °C (A) | 25 |
| IH | No |
| Ic (Peak) (A) | 50 |
| Inverter | Yes |
| Lead Compliant | No |
| MOQ | 1 |
| Mounting Type | Through Hole |
| PFC | No |
| Pc (W) | 34 |
| Qg typ (nC) | 19 |
| Series Name | 60Dx Series |
| Strobe | No |
| Tape & Reel | No |
| VCE (sat) (V) | 1.7 |
| VCES (V) | 600 |
| tf (Typical) (µs) | 0.08 |
| tsc (μs) | 3 |
RJH60D2DPP-A0 に関するリソース
説明
Renesas' RJH60D2DPP-A0 600V, 12A insulated-gate bipolar transistor (IGBT) features trench gate and thin wafer technology, built-in fast recovery diode (100ns typ.) in one package, and low collector to emitter saturation voltage. The device can be used for power switching applications.
