特長
- Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 30 A)
- Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)
- Designed for automotive application and AEC-Q101 qualified
説明
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
適用されたフィルター
読込中