特長
- Super low on-state resistance RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ MAX. (VGS = 4.5 V, ID = 7.5 A)
- Low Ciss: Ciss = 1500 pF TYP. (VDS = 25 V)
- Designed for automotive application and AEC-Q101 qualified
- Small size package 8-pin HSON dual
説明
NP29N06QDK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.
パラメータ
| 属性 | 値 |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 2 |
| Standard Pkg. Type | SO8-FL 5x6 BSC |
| Gate Level | Logic |
| VDSS (Max) (V) | 60 |
| ID (A) | 30 |
| RDS (ON) (Max) @10V (mohm) | 14 |
| RDS (ON) (Max) @4.5V (mohm) | 21 |
| Pch (W) | 59 |
| Ciss (Typical) (pF) | 1500 |
| Series Name | NP Series |
パッケージオプション
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| HSON | 5 x 5 x 1.45 | 8 |
アプリケーション・ブロック図
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