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Features

  • Super low on-state resistance RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ MAX. (VGS = 4.5 V, ID = 7.5 A)
  • Low Ciss: Ciss = 1500 pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Small size package 8-pin HSON dual

Description

NP29N06QDK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.

Parameters

AttributesValue
Qualification LevelAutomotive
Nch/PchNch
Channels (#)2
Standard Pkg. TypeSO8-FL 5x6 BSC
Gate LevelLogic
VDSS (Max) (V)60
ID (A)30
RDS (ON) (Max) @10V (mohm)14
RDS (ON) (Max) @4.5V (mohm)21
Pch (W)59
Ciss (Typical) (pF)1500
Series NameNP Series

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
HSON5 x 5 x 1.458

Application Block Diagrams

Highly Integrated 100W USB-PD Charger Block Diagram
100W USB PD In-Car Integrated Charger
Charge devices efficiently on the go with a 100W USB PD 3.0 vehicle charger for travel convenience.

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Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) FreeCountry of AssemblyCountry of Wafer Fabrication
NP30N06QDK-E1-AYActiveAvailableIn StockRoHS:EN
RoHS:JA
HSON1ku | $0.8828#Embossed Tape1YesJAPANJAPAN

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