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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation)
High Speed, Dual Channel Power MOSFET Drivers

パッケージ情報

CADモデル:View CAD Model
Pkg. Type:SOICN
Pkg. Code:MSL
Lead Count (#):8
Pkg. Dimensions (mm):4.9 x 3.9 x 0.00
Pitch (mm):1.3

環境及び輸出分類情報

Moisture Sensitivity Level (MSL)3
Pb (Lead) FreeYes
RoHS (ISL89412IBZ-T13)ダウンロード
ECCN (US)
HTS (US)

製品スペック

Lead Count (#)8
Carrier TypeReel
Moisture Sensitivity Level (MSL)3
Pb (Lead) FreeYes
Pb Free CategoryPb-Free 100% Matte Tin Plate w/Anneal-e3
Temp. Range (°C)-40 to +85°C
Drivers (#)2
Fall Time0.013
IS (mA)2.5
Input Signal (Max)18
Input Signal Range0 to 18
Input Supply (Max) (VP)18 - 18
Input Supply Range (V)4.5 - 18
Input Voltage (Max) (V)18
Length (mm)4.9
MOQ2500
Operating Freq (Max) (MHz)10
Output Signal (Max) (V)18
Output Signal Range0 to +18
Parametric CategoryLow-Side FET Drivers
Peak Output Current IPK (A)2
Pitch (mm)1.3
Pkg. Dimensions (mm)4.9 x 3.9 x 0.00
Pkg. TypeSOICN
Qualification LevelStandard
Rise Time (μs)10
Turn Off Delay (ns)20
Turn On Delay (ns)18
VBIAS (Min) (V)4.5
Width (mm)3.9

説明

The ISL89410, ISL89411, ISL89412 ICs are similar to the EL7202, EL7212, EL7222 series but with greater VDD ratings. These are very high speed matched dual drivers capable of delivering peak currents of 2. 0A into highly capacitive loads. The high speed performance is achieved by means of a proprietary Turbo-Driver circuit that speeds up input stages by tapping the wider voltage swing at the output. Improved speed and drive capability are enhanced by matched rise and fall delay times. These matched delays maintain the integrity of input-to-output pulse-widths to reduce timing errors and clock skew problems. This improved performance is accompanied by a 10-fold reduction in supply currents over bipolar drivers, yet without the delay time problems commonly associated with CMOS devices. Dynamic switching losses are minimized with non-overlapped drive techniques.