パッケージ情報
| CADモデル: | View CAD Model |
| Pkg. Type: | DIE |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | |
| Pitch (mm): |
環境及び輸出分類情報
| Moisture Sensitivity Level (MSL) | |
| Pb (Lead) Free | No |
| ECCN (US) | EAR99 |
| HTS (US) | 8541.49.7040 |
| RoHS (ISL73024SEHMX) | 英語日本語 |
製品スペック
| Pkg. Type | DIE |
| Qualification Level | Class Ve |
| Pb (Lead) Free | No |
| MOQ | 100 |
| Temp. Range (°C) | -55 to +125°C |
| CAGE code | 34371 |
| DSEE (MeV·cm2/mg) | 86 |
| Die Sale Availability? | Yes |
| Flow | RH Hermetic |
| IDS (A) | 7.5 |
| Lead Compliant | No |
| Models Available | SPICE |
| PROTO Availability? | Yes |
| Qg typ (nC) | 14 |
| RDSON (Typ) (mΩ) | 45 |
| Rating | Space |
| TID LDR (krad(Si)) | 75 |
| Tape & Reel | No |
| Thermal Resistance θJC (°C/W) | 18.7 |
| VDS (V) | 200 |
| VGS (Max) (V) | 6 |
| VGS(TH) (Max) (V) | 2.5 |
ISL73024SEH に関するリソース
説明
The ISL73024SEH is a 200V N-channel enhancement mode GaN power transistor. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.