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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation)
Single Event and Total Dose Hardened, High-Speed, Dual Output PWMs

パッケージ情報

CADモデル:View CAD Model
Pkg. Type:DIE
Pkg. Code:
Lead Count (#):
Pkg. Dimensions (mm):
Pitch (mm):

環境及び輸出分類情報

Moisture Sensitivity Level (MSL)
Pb (Lead) FreeNo
ECCN (US)9A515.e.1
HTS (US)8542.39.0090

製品スペック

Pkg. TypeDIE
DLA SMD5962F0251102V9A
Pb (Lead) FreeNo
MOQ100
Temp. Range (°C)-55 to +125°C
CAGE code34371
Control ModeVoltage, Peak Current Mode
DSEE (MeV·cm2/mg)86.3
Die Sale Availability?Yes
Duty Cycle (Max) (%)100
FlowRH Hermetic
Models AvailableiSIM
No-Load Operating Current25 mA
Operating Freq (Max) (MHz)0.5
Outputs (#)2
PROTO Availability?Yes
Phase of OutputsIn Phase
Phases (Max)2
Qualification LevelClass V
Quiescent Current55µA
RatingSpace
SMD URL5962-02511
Supply Voltage (max) (V)30 - 30
Supply Voltage (min) (V)12 - 12
Switching Frequency (max) (kHz)3000
Switching Frequency (min) (kHz)10
TID HDR (krad(Si))300
TopologyBoost, Flyback, Forward, Full Bridge, Half Bridge, Push-Pull
UVLO Rising (V)8.6
VDD1 (V)12 - 20
VREF (V)5.1
VREF OutputYes

説明

The IS-1825ASRH, IS-1825BSRH, IS-1825BSEH, ISL71823ASRH, and ISL71823BSRH are single event and total dose hardened pulse width modulators designed to be used in high-frequency switching power supplies in either voltage or current-mode configurations. These devices include a precision voltage reference, a low power start-up circuit, a high-frequency oscillator, a wide-band error amplifier, and a fast current-limit comparator. The IS-1825xSRH and IS-1825xSEH feature dual, alternating output operating from zero to less than 50% duty cycle, and the ISL71823xSRH features dual in-phase output operating from zero to less than 100% duty cycle. The B versions of the parts test the delay from clock out to PWM output switching after power has been applied to the modulator (tPWM). The SEH parts are wafer-by-wafer acceptance tested to 50krad(Si) at a low dose rate of <10mrad(Si)/s. Constructed with the Rad Hard Silicon Gate (RSG) dielectrically isolated BiCMOS process, these devices are immune to single-event latch-up and have been specifically designed to provide a high level of immunity to single-event transients. All specified parameters are established and tested for 300krad(Si) total dose performance. The devices are offered in a 16 Ld CDIP or a 20 Ld CDFP and fully specified to across the temperature range of -50 °C to +125 °C.