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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation)
2kx8 CMOS PROM

パッケージ情報

CADモデル:View CAD Model
Pkg. Type:SBDIP
Pkg. Code:HVR
Lead Count (#):24
Pkg. Dimensions (mm):30.5 x 15.1 x 2.41
Pitch (mm):2.5

環境及び輸出分類情報

Moisture Sensitivity Level (MSL)Not Applicable
Pb (Lead) FreeNo
ECCN (US)3A001.a.2.c
HTS (US)8542.32.0071

製品スペック

Pkg. TypeSBDIP
Lead Count (#)24
Carrier TypeTube
Moisture Sensitivity Level (MSL)Not Applicable
Pb (Lead) FreeNo
Pb Free CategoryHot Solder Dip
MOQ45
Temp. Range (°C)-55 to +125°C
CAGE code34371
Die Sale Availability?No
FlowHarsh Environment & MIL-STD-883
Length (mm)30.5
PROTO Availability?No
Pitch (mm)2.5
Pkg. Dimensions (mm)30.5 x 15.1 x 2.41
Qualification LevelClass Q
RatingMIL-STD-883
Thickness (mm)2.41
Width (mm)15.1

説明

The HM-6617/883 is a 16, 384-bit fuse link CMOS PROM in a 2K word by 8-bit/word format with "Three-State" outputs. This PROM is available in the standard 0. 600 inch wide 24 pin SBDIP, the 0. 300 inch wide slim SBDIP, and the JEDEC standard 32 pad CLCC. The HM-6617/883 utilizes a synchronous design technique. This includes on-chip address latches and a separate output enable control which makes this device ideal for applications utilizing recent generation microprocessors. This design technique, combined with the Renesas advanced self-aligned silicon gate CMOS process technology offers ultra-low standby current. Low ICCSB is ideal for battery applications or other systems with low power requirements. The Renesas NiCr fuse link technology is utilized on this and other Renesas CMOS PROMs. This gives the user a PROM with permanent, stable storage characteristics over the full industrial and military temperature voltage ranges. NiCr fuse technology combined with the low power characteristics of CMOS provides an excellent alternative to standard bipolar PROMs or NMOS EPROMs. All bits are manufactured storing a logical "0" and can be selectively programmed for a logical "1" at any bit location.