特長
- 3 Micron Radiation Hardened SOS CMOS
- Total Dose 200K RAD (Si)
- SEP Effective LET No Upsets: >100 MEV-cm2/mg
- Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
- Dose Rate Survivability: >1 x 1012 RAD (Si)/s
- Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
- Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day (Typ)
- Latch-Up Free Under Any Conditions
- Military Temperature Range: -55°C to +125°C
- Significant Power Reduction Compared to LSTTL ICs
- DC Operating Voltage Range: 4.5V to 5.5V
- Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
- Input Current Levels Ii ≤ 5µA at VOL, VOH
HCS04MS Functional Diagram
説明
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The Intersil HCS04MS is a Radiation Hardened Hex Inverter. A logic level on any input forces the output to the opposite logic state. The HCS04MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS04MS is supplied in a 14 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix).
