Features
- 3 Micron Radiation Hardened SOS CMOS
- Total Dose 200K RAD (Si)
- SEP Effective LET No Upsets: >100 MEV-cm2/mg
- Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
- Dose Rate Survivability: >1 x 1012 RAD (Si)/s
- Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
- Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day (Typ)
- Latch-Up Free Under Any Conditions
- Military Temperature Range: -55°C to +125°C
- Significant Power Reduction Compared to LSTTL ICs
- DC Operating Voltage Range: 4.5V to 5.5V
- Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
- Input Current Levels Ii ≤ 5µA at VOL, VOH
HCS04MS Functional Diagram
Description
Support is limited to customers who have already adopted these products.
The Intersil HCS04MS is a Radiation Hardened Hex Inverter. A logic level on any input forces the output to the opposite logic state. The HCS04MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS04MS is supplied in a 14 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix).
Support Communities
Get quick technical support online from Renesas Engineering Community technical staff.
Knowledge Base
Browse our knowledge base for helpful articles, FAQs, and other useful resources.
