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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation)
High Speed, Monolithic Pin Driver

パッケージ情報

CADモデル:View CAD Model
Pkg. Type:PDIP
Pkg. Code:EUL
Lead Count (#):8
Pkg. Dimensions (mm):9.7 x 6.6 x 3.94
Pitch (mm):2.5

環境及び輸出分類情報

Moisture Sensitivity Level (MSL)
Pb (Lead) FreeNo
ECCN (US)EAR99
HTS (US)8542.39.0090

製品スペック

Lead Count (#)8
Carrier TypeTube
Pitch (mm)2.5
Pkg. Dimensions (mm)9.7 x 6.6 x 3.94
Pb (Lead) FreeNo
Temp. Range (°C)-40 to +85°C
Drivers (#)1
Fall Time0.02
IS (mA)2.5
Input Signal (Max)16
Input Signal Range0 to VP
Input Supply (Max) (VP)16 - 16
Input Supply Range (V)4.5 - 16
Input Voltage (Max) (V)16
Length (mm)9.7
MOQ800
Operating Freq (Max) (MHz)10
Output Signal (Max) (V)16
Output Signal (Min) (V)-3
Output Signal Range-3 to 16
Peak Output Current IPK (A)4
Pkg. TypePDIP
Qualification LevelStandard
RDS (ON) (Ohms)1.5
Rise Time (μs)20
Thickness (mm)3.94
Turn Off Delay (ns)20
Turn On Delay (ns)10
VBIAS (Min) (V)4.5
Width (mm)6.6

説明

The EL7154 three-state pin driver is particularly well suited for ATE and level shifting applications. The 4A peak drive capability, makes the EL7154 an excellent choice when driving High-Speed capacitive lines. The P-Channel MOSFET is completely isolated from the power supply, providing a high degree of flexibility. Pin (7) can be grounded, and the output can be taken from pin (8) when a source follower output is desired. The N-Channel MOSFET has an isolated drain, but shares a common bus with pre-drivers and level shifter circuits. This is necessary to ensure that the N-Channel device can turn off effectively when VL goes below GND. In some power-FET and IGBT applications, negative drive is desirable to insure effective turn-off. The EL7154 can be used in these applications by returning VL to a moderate negative potential.