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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation)
3.3V 512K x 18 Synchronous 3.3V I/O Flow-Through SRAM

パッケージ情報

CADモデル:View CAD Model
Pkg. Type:CABGA
Pkg. Code:BQG165
Lead Count (#):165
Pkg. Dimensions (mm):15.0 x 13.0 x 1.2
Pitch (mm):1

環境及び輸出分類情報

Pb (Lead) FreeYes
Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041

製品スペック

Lead Count (#)165
Pb (Lead) FreeYes
Carrier TypeTray
Moisture Sensitivity Level (MSL)3
ArchitectureSynch Burst
Bus Width (bits)18
Core Voltage (V)3.3
Density (Kb)9216
I/O Voltage (V)3.3 - 3.3
Length (mm)15
MOQ136
Organization512K x 18
Output TypeFlowthrough
Package Area (mm²)195
Pb Free Categorye1 SnAgCu
Pitch (mm)1
Pkg. Dimensions (mm)15.0 x 13.0 x 1.2
Pkg. TypeCABGA
Price (USD)$17.13647
Qty. per Carrier (#)136
Qty. per Reel (#)0
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelNo
Temp. Range (°C)-40 to 85°C
Thickness (mm)1.2
Width (mm)13

説明

The 71V67903 3.3V CMOS SRAM is organized as 512K x 18. The 71V67903 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.