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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation) - 6月はプライド月間として、LGBTQ+の権利や文化、コミュニティについて啓発する世界的な活動月間です
3.3V 256K x 18 Synchronous Flow-Through SRAM w/3.3V I/O

パッケージ情報

CADモデル:View CAD Model
Pkg. Type:TQFP
Pkg. Code:PKG100
Lead Count (#):100
Pkg. Dimensions (mm):20.0 x 14.0 x 1.4
Pitch (mm):0.65

環境及び輸出分類情報

Pb (Lead) FreeYes
Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041

製品スペック

Lead Count (#)100
Pb (Lead) FreeYes
Carrier TypeTray
Moisture Sensitivity Level (MSL)3
ArchitectureSynch Burst
Bus Width (bits)18
Core Voltage (V)3.3
Density (Kb)4608
I/O Frequency (MHz)150 - 150
I/O Voltage (V)3.3 - 3.3
Length (mm)20
MOQ144
Organization256K x 18
Output TypePipelined
Package Area (mm²)280
Pb Free Categorye3 Sn
Pitch (mm)0.65
Pkg. Dimensions (mm)20.0 x 14.0 x 1.4
Pkg. TypeTQFP
Qty. per Carrier (#)72
Qty. per Reel (#)0
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelNo
Temp. Range (°C)0 to 70°C
Thickness (mm)1.4
Width (mm)14

説明

The 71V3578 3.3V CMOS SRAM is organized as 256K x 18. The 71V3578 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.