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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation) - 6月はプライド月間として、LGBTQ+の権利や文化、コミュニティについて啓発する世界的な活動月間です
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O

パッケージ情報

CADモデル:View CAD Model
Pkg. Type:TQFP
Pkg. Code:PKG100
Lead Count (#):100
Pkg. Dimensions (mm):20.0 x 14.0 x 1.4
Pitch (mm):0.65

環境及び輸出分類情報

Pb (Lead) FreeYes
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041
Moisture Sensitivity Level (MSL)3

製品スペック

Lead Count (#)100
Pb (Lead) FreeYes
Carrier TypeTray
ArchitectureZBT
Bus Width (bits)18
Core Voltage (V)3.3
Cycle Time (ns)75
Density (Kb)4608
I/O Voltage (V)2.5 - 2.5
Length (mm)20
MOQ144
Moisture Sensitivity Level (MSL)3
Organization256K x 18
Output TypeFlowthrough
Package Area (mm²)280
Pb Free Categorye3 Sn
Pitch (mm)0.65
Pkg. Dimensions (mm)20.0 x 14.0 x 1.4
Pkg. TypeTQFP
Qty. per Carrier (#)72
Qty. per Reel (#)0
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelNo
Temp. Range (°C)0 to 70°C
Thickness (mm)1.4
Width (mm)14

説明

The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).