Radiation Hardened ISL70040SEH GaN FET Driver & ISL70020SEH GaN Power Transistor Evaluation Platform (40V GaN FET)

The ISL70040SEHEV5Z evaluation platform is designed to evaluate the ISL70040SEH GaN FET driver alongside the ISL70020SEH GaN power transistor. The ISL70040SEH is designed to drive enhancement-mode Gallium Nitride (GaN) FETs in isolated topologies and boost-type configurations. The board operates across a supply range of 4.5V to 13.2V and offers both non-inverting and inverting inputs to satisfy non-inverting and inverting gate drive within a single device. The ISL70040SEH has a 4.5V gate drive voltage (V_DRV), generated by an internal regulator, which prevents the gate voltage from exceeding the maximum gate-source rating of enhancement-mode GaN FETs. The gate drive voltage also features an undervoltage lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever V_DRV is below the UVLO threshold. The ISL70040SEH inputs can withstand voltages up to 14.7V regardless of the V_DD voltage, which allows the ISL70040SEH inputs to be connected directly to most PWM controllers. The split outputs of the ISL70040SEH offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on/off paths.

The ISL70020SEH is a 40V N-channel enhancement-mode GaN power transistor. The exceptionally high electron mobility and low temperature coefficient of the GaN allow for very low r_DS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size.