Features
- Electrically screened to DLA SMD# 5962-02511
- QML qualified per MIL-PRF-38535 requirements
- EH version is wafer-by-wafer acceptance tested to 50krad(Si) LDR
- Oscillator frequency: 1MHz (max)
- High output drive current: 1A peak (typ)
- Low startup current: 300μA (max)
- Undervoltage Lockout
- Start threshold: 8.8V (max)
- Stop threshold: 7.6V (min)
- Hysteresis: 300mV (min)
- Pulse-by-pulse current limiting
- Programmable leading edge blanking
- Radiation Hardness
- High Dose Rate (HDR) (50-300rad(Si)/s): 300krad(Si)
- Low Lose Rate (LDR) (0.01rad(Si)/s): 50krad(Si)
- Latch-up immune (dielectrically isolated)
- SEU immune: LET= 35MeV•cm2/mg
Description
The IS-1825ASRH, IS-1825BSRH, IS-1825BSEH, ISL71823ASRH, and ISL71823BSRH are single event and total dose hardened pulse width modulators designed to be used in high-frequency switching power supplies in either voltage or current-mode configurations. These devices include a precision voltage reference, a low power start-up circuit, a high-frequency oscillator, a wide-band error amplifier, and a fast current-limit comparator. The IS-1825xSRH and IS-1825xSEH feature dual, alternating output operating from zero to less than 50% duty cycle, and the ISL71823xSRH features dual in-phase output operating from zero to less than 100% duty cycle. The B versions of the parts test the delay from clock out to PWM output switching after power has been applied to the modulator (tPWM). The SEH parts are wafer-by-wafer acceptance tested to 50krad(Si) at a low dose rate of <10mrad(Si)/s. Constructed with the Rad Hard Silicon Gate (RSG) dielectrically isolated BiCMOS process, these devices are immune to single-event latch-up and have been specifically designed to provide a high level of immunity to single-event transients. All specified parameters are established and tested for 300krad(Si) total dose performance. The devices are offered in a 16 Ld CDIP or a 20 Ld CDFP and fully specified to across the temperature range of -50 °C to +125 °C.
Parameters
| Attributes | Value |
|---|---|
| Rating | Space |
| Control Mode | Voltage, Peak Current Mode |
| Phases (Max) | 2 |
| No-Load Operating Current | 25 |
| Quiescent Current | 55µA |
| Supply Voltage (min) (V) | - |
| Supply Voltage (max) (V) | - |
| Switching Frequency (min) (kHz) | 10 |
| Switching Frequency (max) (kHz) | 3000 |
| Topology | Boost, Flyback, Forward, Full Bridge, Half Bridge, Push-Pull |
| VREF (V) | 5.1 |
| Temp. Range (°C) | -55 to +125°C |
| TID HDR (krad(Si)) | 300 |
| DSEE (MeV·cm2/mg) | 86.3 |
| Flow | RH Hermetic |
| Qualification Level | Class Q, Class V, EM, QML Class Q (Military), QML Class V (Space) |
| Die Sale Availability? | Yes |
| PROTO Availability? | Yes |
Applications
- Voltage or current-mode switching power supplies
- Control of high current MOSFET drivers
- Motor speed and direction control