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Features

  • SRAM-type interface
  • Double-data-rate architecture
  • PLL circuitry
  • Cycle time: 1.875 ns @ tRC = 15 ns 2.5 ns @ tRC = 15 ns 2.5 ns @ tRC = 20 ns 3.3 ns @ tRC = 20 ns
  • Non-multiplexed addresses
  • Multiplexing option is available.
  • Data mask for WRITE commands
  • Differential input clocks (CK and CK#)
  • Differential input data clocks (DK and DK#)
  • Data valid signal (QVLD)
  • Programmable burst length: 2 / 4 / 8 (x18)
  • User programmable impedance output (25 Ω - 60 Ω)
  • JTAG boundary scan

Description

The µPD48576118F1 is a 33, 554, 432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576118F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK#. These products are suitable for application which require synchronous operation, High-Speed, low voltage, high density and wide bit configuration.

Part NumberStatusSamplesStockRoHSPackageCarrier Type
UPD48576118F1-E24-DW1-AObsoleteN/AIn StockRoHS:EN
RoHS:JA
TFBGATray
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