Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | TOLT |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | |
| Pitch (mm): |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | 3 |
| ECCN (US) | EAR99 |
| HTS (US) | 8541.49.7040 |
| Pb (Lead) Free |
Product Attributes
| Pkg. Type | TOLT |
| Carrier Type | Tape & Reel |
| Moisture Sensitivity Level (MSL) | 3 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
| Ciss (Typical) (pF) | 1500 |
| Coss (Typical) (pF) | 127 |
| Country of Assembly | CHINA |
| Country of Wafer Fabrication | JAPAN |
| FET Type | N-Channel |
| Id max @ 25°C (A) | 55.7 |
| Price (USD) | $5.5998 |
| Qg typ (nC) | 24.5 |
| Qoss (nC) | 135 |
| Qualification Level | Standard |
| Quality Level | Standard |
| RDSON (Typ) (mΩ) | 30 |
| RDSON (max) (mΩ) | 41 |
| Ron * Qoss (FOM) | 4050 |
| V(TR)DSS max (V) | 800 |
| Vds min (V) | 650 |
| Vth typ (V) | 4 |
| trr (Typical) (nS) | 36 |
Resources for TP65H030G4PRS
Description
The TP65H030G4PRS, 650V, 30mΩ Gallium Nitride (GaN) FET in a top-side-cooled TOLT package, is a normally-off device using Renesas' Gen IV plus SuperGaN® platform. It combines a high-voltage GaN High Electron Mobility Transistor (HEMT) with an optimized low-voltage silicon MOSFET to deliver superior performance, standard drive, ease of adoption, and enhanced reliability.