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Features

  • Single 3V supply: 2.7V to 3.6V
  • Access time: 55ns (max.)
  • Current consumption: Standby: 1.2µA (typ.)
  • Common data input and output: Three-state output
  • Directly TTL compatible: All inputs and outputs
  • Battery backup operation

Description

The RMWV6416A is a 64-Mbit static RAM organized 4, 194, 304-word × 16-bit, fabricated by Renesas' high-performance Advanced LPSRAM technologies. The RMWV6416A realizes higher density, higher performance, and low-power consumption. The device offers low-power standby power dissipation. Therefore, it is suitable for battery backup systems. It is offered in a 48-pin TSOP (I), 52-pin µTSOP (II), or 48-ball fine-pitch ball grid array.

Parameters

AttributesValue
Memory Density64
Organization4M x 16
Access Time (ns)55
Supply Voltage (V)2.7 - 3.6
Temp. Range (°C)-40 to +85

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)Pitch (mm)
FBGA(48)8 x 8 x 1.248
TSOP(1)18 x 12 x 1480.5
TSOP(2)11 x 9 x 1520.4
Part NumberStatusSamplesStockPackageBudgetary Price (USD)Carrier TypeMoisture Sensitivity Level (MSL)Country of AssemblyCountry of Wafer Fabrication
RMWV6416AGBG-5S2#AC0ActiveAvailableIn StockTFBGA1ku | $52.53Tray3JAPAN, TAIWANJAPAN
RMWV6416AGBG-5S2#KC0ActiveN/AOut of StockTFBGA1ku | $52.53Embossed Tape3JAPAN, TAIWANJAPAN
RMWV6416AGSA-5S2#AA0ActiveAvailableIn StockTSOP(1)1ku | $52.53Tray3TAIWANJAPAN
RMWV6416AGSA-5S2#KA0ActiveN/AOut of StockTSOP(1)1ku | $52.53Embossed Tape3TAIWANJAPAN
RMWV6416AGSD-5S2#AA0ActiveAvailableIn StockTSOP(2)1ku | $52.53Tray3TAIWANJAPAN
RMWV6416AGSD-5S2#HA0ActiveN/AOut of StockTSOP(2)1ku | $52.53Embossed Tape3TAIWANJAPAN

Support Communities

  1. using SRAM instead of SDRAM

    Can we use SRAM instead of SDRAM in RX72N design. RX72N Datasheet recommends for SDRAM. According to the datasheet Independent SDRAM area (128 Mbytes) and max. operating frequency of 80 MHz. We want to use RMWV6416A has max density of 64Mb with RX72N

    Dec 18, 2024
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