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Features

  • Single 3V supply: 2.7V to 3.6V
  • Access time: 45ns (max.)
  • Current consumption: Standby: 0.3µA (typ.)
  • Equal access and cycle times
  • Common data input and output: Three-state output
  • Directly TTL compatible: All inputs and outputs
  • Battery backup operation

Description

The RMLV0416E is a 4-Mbit static RAM organized as 262, 144-word × 16-bit, fabricated by Renesas' high-performance Advanced LPSRAM technologies. The RMLV0416E realizes higher density, higher performance, and low-power consumption. The RMLV0416E device offers low-power standby power dissipation. Therefore, it is suitable for battery backup systems. It is offered in a 44-pin TSOP (II) or 48-ball fine-pitch ball grid array.

Parameters

AttributesValue
Memory Density4
Organization256K x 16
Access Time (ns)45
Supply Voltage (V)2.7 - 3.6
Temp. Range (°C)-40 to +85

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)Pitch (mm)
FBGA(48)8 x 8 x 1.248
TSOP(44)18 x 10 x 1.2440.8
Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Carrier TypeMoisture Sensitivity Level (MSL)Country of AssemblyCountry of Wafer Fabrication
RMLV0416EGBG-4S2#AC0ActiveAvailableOut of StockContactTFBGA1ku | $6.32Tray3CHINA, JAPAN, TAIWANJAPAN
RMLV0416EGBG-4S2#KC0ActiveN/AOut of StockContactTFBGA1ku | $6.32Embossed Tape3CHINA, JAPAN, TAIWANJAPAN
RMLV0416EGSB-4S2#AA1ActiveAvailableIn StockContactTSOP(2)1ku | $6.32Tray3MALAYSIA, TAIWANJAPAN
RMLV0416EGSB-4S2#HA1ActiveN/AIn StockContactTSOP(2)1ku | $6.32Embossed Tape3MALAYSIA, TAIWANJAPAN
RMLV0416EGSB-4S2#AA0ObsoleteN/AOut of StockRoHS:EN
RoHS:JA
TSOP(2)Tray3
RMLV0416EGSB-4S2#HA0ObsoleteN/AIn StockRoHS:EN
RoHS:JA
TSOP(2)Embossed Tape3

Support Communities

  1. RMLV0416EGSB-4S2#AA1 SRAM

    Hi All, I would like to confirm the Output Holding time from address change  (tOH) during Read cycle for RMLV0416E Series. As per Spec, the minimum time is 10ns. From my actual measurement, I am getting 0s.  Can anyone help to clarify please. Thanks in advance.   Read Cycle AC Characteristics ...

    Jan 6, 2020
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