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IGBT 650V 20A TO-3PFM

Package Information

CAD Model:View CAD Model
Pkg. Type:TO-3PFM
Pkg. Code:pkg_1307
Lead Count (#):3
Pkg. Dimensions (mm):
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
ECCN (US)
HTS (US)

Product Attributes

Pkg. TypeTO-3PFM
Lead Count (#)3
Carrier TypeTube
Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
ApplicationPFC
Channels (#)1
IC @100 °C (A)20
IC @25 °C (A)40
Ic (Peak) (A)150
Lead CompliantYes
MOQ1
Mounting TypeThrough Hole
Nch/PchNch
Pc (W)68.8
Pch (W)68.8
Qualification LevelIndustrial
Series Name65T4x Series
Simulation Model AvailableYes
Tape & ReelNo
VCE (sat) (V)1.8
VCES (V)650
VDSS (Max) (V)650
tf (Typical) (µs)0.045

Description

The RJP65T43DPM 650V, 20A trench insulated-gate bipolar transistor (IGBT) features a 150A collector peak current, offers through hole mounting, and comes in a TO-3PFM package.