Features
- Low collector to emitter saturation voltage VCE(sat) = 1.8V typ. (at IC = 15A, VGE = 15V, Tc = 25 °C)
- High-speed switching
- Short circuit withstands time (10µs min.)
Description
The RJP1CS01DWS 1250V, 15A insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage and can be used for inverter applications. It is available in a Sawn wafer package type.
Applications
- Inverters
Applied Filters: