Features
- Low on-state resistance RDS(on) = 1.2 mΩ typ. (at VGS = 10 V, ID = 18 A)
- With Current sensing
- Surface mount package
- Quality grade : Standard
Description
The RBK04U04GNS is a Nch Single Power MOSFETs 40V 35A 1.5mohm HSON-8pin.
designed for Li-ion battery management system.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Industrial |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | SO8-FL 5x6 BSC |
| Gate Level | Standard |
| VDSS (Max) (V) | 40 |
| ID (A) | 35 |
| RDS (ON) (Max) @10V (mohm) | 1.5 |
| Pch (W) | 83 |
| Ciss (Typical) (pF) | 6900 |
| Qg typ (nC) | 111 |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) | Pitch (mm) |
|---|---|---|---|
| HSON | 5 x 6 x 1.1 | 8 | 1.27 |
| Part Number | Status | Samples | Stock | Package | Budgetary Price (USD) | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pb (Lead) Free | Country of Assembly | Country of Wafer Fabrication |
|---|---|---|---|---|---|---|---|---|---|---|---|
| RBK04U04GNS-0000#HBH | Active | N/A | Out of Stock | HSON | 1ku | $1.227 | 8# | Embossed Tape | 1 | Yes | CHINA | JAPAN |
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- Application NotePDF 596 KB R07AN0051EJ0100 Rev.1.00 Apr 27, 2026Compares the thermal performance of automotive power MOSFETs in the TOLL (TO-Leadless) package and its derivatives, including the TOLT (TO-Leaded Top-side Cooling) package. The information presented in this document is intended to serve as a comprehensive guideline for designing high-power automotive systems.
- Application NotePDF 936 KB R07AN0050EJ0100 Rev.1.00 Dec 03, 2025Measurement frequency and the influence of parasitic inductance are crucial in capacitance measurements for Power MOSFETs. Split-gate structures, with their low Crss and higher Ciss, face challenges from parasitic inductance, making high-frequency measurements difficult. In contrast, standard-gate trench structures allow relatively accurate results. The influence of parasitic inductance in actual measurements is examined from various perspectives.
- GuidePDF 988 KB R07ZZ0016EJ0100 Rev.1.00 Dec 03, 2025The diagrams in this document show the recommended mounting pad layout dimensions for Renesas Power MOSFETs. In actual PCB design, optimization should consider mounting density, mountability, dimensional tolerances, and other relevant factors.
- Application NotePDF 827 KB R07AN0034EJ0100 Rev.1.00 Oct 10, 2024AI-generated Summary: The document explains the short-circuit detection and protection capabilities of the Renesas BMS Shunt-less evaluation board using the RBK04U04GN MOSFET. It details short-circuit and over-current tests demonstrating rapid shutdown responses to protect battery packs and systems. The RBK04U04GNS MOSFET features low on-resistance and built-in current sensing, making it suitable for mid-voltage applications such as power tools, e-bikes, and industrial devices. The document includes test waveforms, circuit diagrams, and performance data supporting safe and reliable battery management system operation.
- Application NotePDF 1.1 MB R07AN0021EJ0100 Rev.1.00 Jul 24, 2024AI-generated Summary: Battery Management Systems (BMS) require efficient monitoring and protection to ensure safe operation of lithium-ion batteries, addressing risks like overcharging and overheating. The Renesas BMS shunt-less solution eliminates traditional shunt resistors and thermistors by integrating MOSFETs with current sensing and thermal monitoring capabilities, reducing heat generation and material usage. This approach enhances safety and efficiency across various industrial and automotive applications, from low to high power. The solution leverages a combination of battery fuel gauge ICs, MOSFETs, and advanced thermal detection to optimize performance and minimize power loss.
- Application NoteAI-generated Summary: Absolute maximum ratings define safe operational limits for MOSFETs, including voltage, current, and temperature thresholds to prevent device damage. Electrical characteristics specify parameters like breakdown voltage, threshold voltage, on-resistance, capacitances, and switching times. Allowable channel dissipation decreases as case temperature rises, calculated by a specific formula. The safe operating area (SOA) outlines five limiting conditions: current rating, on-resistance, channel dissipation, secondary breakdown, and voltage rating, ensuring reliable MOSFET operation under various conditions.
- Application NoteAI-generated Summary: The document outlines derating standards for Power MOSFETs and IGBTs, emphasizing temperature, humidity, voltage, current, and power limits to ensure device reliability. It discusses package type selection between hermetic sealed and plastic molded types, highlighting the advantages of surface-mount packages for miniaturization. It also details precautions for physical handling, including proper lead forming, cutting, and mounting techniques to prevent stress and damage during installation.
Recommended Documents (1)
Datasheets (1)
- GuidePDF 988 KB R07ZZ0016EJ0100 Rev.1.00 Dec 03, 2025The diagrams in this document show the recommended mounting pad layout dimensions for Renesas Power MOSFETs. In actual PCB design, optimization should consider mounting density, mountability, dimensional tolerances, and other relevant factors.
Manuals & Guides (1)
- Application NotePDF 596 KB R07AN0051EJ0100 Rev.1.00 Apr 27, 2026Compares the thermal performance of automotive power MOSFETs in the TOLL (TO-Leadless) package and its derivatives, including the TOLT (TO-Leaded Top-side Cooling) package. The information presented in this document is intended to serve as a comprehensive guideline for designing high-power automotive systems.
- Application NotePDF 936 KB R07AN0050EJ0100 Rev.1.00 Dec 03, 2025Measurement frequency and the influence of parasitic inductance are crucial in capacitance measurements for Power MOSFETs. Split-gate structures, with their low Crss and higher Ciss, face challenges from parasitic inductance, making high-frequency measurements difficult. In contrast, standard-gate trench structures allow relatively accurate results. The influence of parasitic inductance in actual measurements is examined from various perspectives.
- Application NotePDF 827 KB R07AN0034EJ0100 Rev.1.00 Oct 10, 2024AI-generated Summary: The document explains the short-circuit detection and protection capabilities of the Renesas BMS Shunt-less evaluation board using the RBK04U04GN MOSFET. It details short-circuit and over-current tests demonstrating rapid shutdown responses to protect battery packs and systems. The RBK04U04GNS MOSFET features low on-resistance and built-in current sensing, making it suitable for mid-voltage applications such as power tools, e-bikes, and industrial devices. The document includes test waveforms, circuit diagrams, and performance data supporting safe and reliable battery management system operation.
- Application NotePDF 1.1 MB R07AN0021EJ0100 Rev.1.00 Jul 24, 2024AI-generated Summary: Battery Management Systems (BMS) require efficient monitoring and protection to ensure safe operation of lithium-ion batteries, addressing risks like overcharging and overheating. The Renesas BMS shunt-less solution eliminates traditional shunt resistors and thermistors by integrating MOSFETs with current sensing and thermal monitoring capabilities, reducing heat generation and material usage. This approach enhances safety and efficiency across various industrial and automotive applications, from low to high power. The solution leverages a combination of battery fuel gauge ICs, MOSFETs, and advanced thermal detection to optimize performance and minimize power loss.
- Application NoteAI-generated Summary: Absolute maximum ratings define safe operational limits for MOSFETs, including voltage, current, and temperature thresholds to prevent device damage. Electrical characteristics specify parameters like breakdown voltage, threshold voltage, on-resistance, capacitances, and switching times. Allowable channel dissipation decreases as case temperature rises, calculated by a specific formula. The safe operating area (SOA) outlines five limiting conditions: current rating, on-resistance, channel dissipation, secondary breakdown, and voltage rating, ensuring reliable MOSFET operation under various conditions.View More (6)
Application Notes & White Papers (6)
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