Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | uSO8-FL |
| Pkg. Code: | |
| Lead Count (#): | 8 |
| Pkg. Dimensions (mm): | 3.3 x 3.5 x 0.85 |
| Pitch (mm): |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| ECCN (US) | |
| HTS (US) | 8541.29.0095 |
| RoHS (RBA50N08EANS-5UA09#HB0) | EnglishJapanese |
Product Attributes
| Pkg. Type | uSO8-FL |
| Lead Count (#) | 8 |
| Carrier Type | Embossed Tape |
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| Channels (#) | 1 |
| Ciss (Typical) (pF) | 1800 |
| Country of Assembly | CHINA |
| Country of Wafer Fabrication | JAPAN |
| Function | Power MOSFETs |
| Gate Level | Standard |
| ID (A) | 50 |
| Id max @ 25°C (A) | 50 |
| Lead Compliant | No |
| Length (mm) | 3.3 |
| MOQ | 3000 |
| Mounting Type | Surface Mount |
| Nch/Pch | Nch |
| Pch (W) | 57 |
| Pkg. Dimensions (mm) | 3.3 x 3.5 x 0.85 |
| Qg typ (nC) | 31 |
| Qualification Level | Automotive |
| RDS (ON) (Max) @10V (mohm) | 9.3 |
| RDS (ON) (Typical) @ 10V / 8V (mohm) | 7.9 |
| Series Name | REXFET-1 |
| Simulation Model Available | Yes |
| Standard Pkg. Type | μSO8-FL 3x3 BSC |
| Tape & Reel | No |
| Thickness (mm) | 0.85 |
| VDSS (Max) (V) | 80 |
| VGSS (V) | 20 |
| Vgs (off) (Max) (V) | 4 |
| Width (mm) | 3.5 |
Resources for RBA50N08EANS-5UA09
Description
The RBA50N08EANS-5UA09 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 3x3 μSO8-FL package. The μSO8-FL package features ultra-compact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly.
Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.
