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Features

  • VDSS = 150V
  • Standard-level gate drive voltage: VGS(th) = 2.2V to 3.7V
  • Super low on-state resistance: RDS(on) = 3.4mΩ max.
  • ID(DC) = 200A
  • Low input capacitance
  • Low thermal resistance
  • 100% avalanche tested
  • AEC-Q101 qualified
  • Production Part Approval Process (PPAP) capable
  • Pb-free lead plating: RoHS compliant
  • MSL1 classified according to IPC/JEDEC J-STD-020

Description

The RBA200N15YANS-3UA03 n‑channel power MOSFET features REXFET-1 split-gate technology and is available in a TOLL package. The TOLL package features compact, leadless designs with wettable flanks to support enhanced thermal performance, reliability, and ease of assembly.

Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and high switching performance, making it ideal for high-power and high-frequency applications.

Parameters

AttributesValue
Qualification LevelAutomotive
Nch/PchNch
Channels (#)1
Standard Pkg. TypeTOLL
Gate LevelStandard
VDSS (Max) (V)150
ID (A)200
RDS (ON) (Max) @10V (mohm)3.4
Pch (W)366
Ciss (Typical) (pF)6200
Qg typ (nC)86
Series NameREXFET-1

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
TOLL9.90 x 11.68 x 2.308

Applications

  • 72V to 96V Battery System and Motor Drive
  • Small Traction (2-Wheel and 3-Wheel Vehicle)
  • Onboard Charger (OBC)
  • Charging Station
  • Low Voltage DC/DC
Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) Free
RBA200N15YANS-3UA03#GB0ActiveAvailableIn StockRoHS:EN
RoHS:JA
TOLL1ku | $3.3648#Embossed Tape1Yes

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