Features
- VDSS = 80V
- Standard-level gate drive voltage: VGS(th) = 2.0V to 4.0V
- Super low on-state resistance: RDS(on) = 2.4mΩ max
- ID = 175A
- Low input capacitance
- Low thermal resistance
- AEC-Q101 qualified
- Production Part Approval Process (PPAP) capable
- Pb-free lead plating: RoHS compliant
- MSL1 classified according to IPC/JEDEC J-STD-020
Description
The RBA175N08EANS-4UA02 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 5x6 SO8-FL package. The SO8-FL package features ultra-compact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly.
Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | SO8-FL 5x6 BSC |
| Gate Level | Standard |
| VDSS (Max) (V) | 80 |
| ID (A) | 175 |
| RDS (ON) (Max) @10V (mohm) | 2.4 |
| Pch (W) | 165 |
| Ciss (Typical) (pF) | 6600 |
| Qg typ (nC) | 99 |
| Series Name | REXFET-1 |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| SO8-FL | 5.15 x 6.10 x 1.00 | 8 |
Applications
- DC/DC onboard charging
- Zone ECUs
- Motor control
- Battery management system
- Fan
- Pump
- Power seat
- Sunroof
- Electric power steering
- Electric parking brake
- E-compressor
- Switch
- LED lighting