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80V, 175A, 2.4mΩ, REXFET-1 N-Channel Power MOSFET in SO8-FL for Automotive

Package Information

CAD Model:View CAD Model
Pkg. Type:SO8-FL
Pkg. Code:
Lead Count (#):8
Pkg. Dimensions (mm):5.15 x 6.10 x 1.00
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
ECCN (US)
HTS (US)8541.29.0095
RoHS (RBA175N08EANS-4UA02#HB0)EnglishJapanese

Product Attributes

Pkg. TypeSO8-FL
Lead Count (#)8
Carrier TypeEmbossed Tape
Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
Channels (#)1
Ciss (Typical) (pF)6600
Country of AssemblyMALAYSIA
Country of Wafer FabricationJAPAN
FunctionPower MOSFETs
Gate LevelStandard
ID (A)175
Id max @ 25°C (A)175
Lead CompliantNo
Length (mm)6.1
MOQ5000
Mounting TypeSurface Mount
Nch/PchNch
Pch (W)165
Pkg. Dimensions (mm)5.15 x 6.10 x 1.00
Qg typ (nC)99
Qualification LevelAutomotive
RDS (ON) (Max) @10V (mohm)2.4
RDS (ON) (Typical) @ 10V / 8V (mohm)2.1
Series NameREXFET-1
Simulation Model AvailableYes
Standard Pkg. TypeSO8-FL 5x6 BSC
Tape & ReelYes
Thickness (mm)1
VDSS (Max) (V)80
VGSS (V)20
Vgs (off) (Max) (V)4
Width (mm)5.15

Description

The RBA175N08EANS-4UA02 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 5x6 SO8-FL package. The SO8-FL package features ultra-compact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly.

Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.