Renesas brings over 30 years of expertise delivering power MOSFETs to automotive, industrial, infrastructure, and consumer markets. Building on the legacies of NEC and Hitachi, our advanced technology is renowned for high performance and long-term reliability—supporting a wide range of voltage, package, and protection options to meet diverse market needs.
Our portfolio spans conventional Trench technology, Thermal FET, and the innovative REXFET™ platform. Designed with advanced split-gate technology, REXFET power MOSFETs achieve lower on-resistance (RDS(on)) and figure-of-merit (FOM), reducing system losses and boosting power density in demanding applications.
With over 25 billion MOSFETs shipped, our portfolio delivers proven reliability. Qualified to JEDEC standards and AEC-Q101, our automotive devices achieve an impressive <0.05DPPM average.
Split-gate technology minimizes on-resistance, lowers FOM, and enhances switching performance. Unique Thermal FET devices integrate over-temperature protection to prevent heat damage.
Address 40V to 150V needs with design flexibility—from pin-to-pin compatible, compact high-current packages to wafer and bare die options. Select devices feature wettable flank technology to improve soldering reliability.
Advanced split-gate technology reduces on-resistance and lowers FOM by 30% compared to previous generations to deliver fast switching and high-efficiency performance for industrial, automotive and other applications.
