Features
- Very-low rDS(ON) 5mΩ (typical)
- Ultra-low total gate charge 14nC (typical)
- SEE hardness (see SEE report for details) - SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86MeV•cm2/mg
- ISL70023SEH radiation accepting testing - High dose rate (50-300rad(Si)/s): 100krad(Si); Low dose rate (0.01rad(Si)/s) : 75krad(Si)
- ISL73023SEH radiation accepting testing - Low dose rate (0.01rad(Si)/s) : 75krad(Si)
- Ultra-small hermetically sealed 4 Ld Surface Mount Device (SMD) package; Package area: 42mm2
- Full military-temperature range operation
- TA = -55°C to +125°C
- TJ = -55°C to +150°C
Description
The ISL73023SEH is a 100V N-channel enhancement mode GaN power transistor. This GaN FET has been characterized for destructive Single-Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allow for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. Combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high-reliability applications.
Parameters
| Attributes | Value |
|---|---|
| Rating | Space |
| VDS (V) | 100 |
| IDS (A) | 60 |
| VGS(TH) (Max) (V) | 2.5 |
| VGS (Max) (V) | 6 |
| RDSON (Typ) (mΩ) | 5 |
| Qg typ (nC) | 2.5 |
| Thermal Resistance θJC (°C/W) | 3.1 |
| Temp. Range (°C) | -55 to +125°C |
| TID HDR (krad(Si)) | 100 |
| TID LDR (krad(Si)) | 75 |
| DSEE (MeV·cm2/mg) | 86 |
| Flow | RH Hermetic |
| Qualification Level | Class Ve, EM |
| Die Sale Availability? | Yes |
| PROTO Availability? | Yes |
Applications
- Switching regulation
- Motor drives
- Relay drives
- Inrush protection
- Down hole drilling
- High reliability industrial
Renesas Boards & Kits
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The ISL70040SEHEV2Z evaluation platform is used to evaluate the ISL70040SEH radiation hardened low-side Gallium Nitride (GaN) FET driver alongside the ISL70023SEH N-channel enhancement mode GaN power transistor. The same board can be used to evaluate the ISL73040SEH radiation hardened low-side... Read More
Radiation Hardened ISL70040SEH GaN FET Driver & ISL7002xSEH GaN Power Transistor Evaluation Platform (200V GaN FET)
The ISL70040SEHEV3Z evaluation platform is designed to evaluate the ISL70040SEH radiation hardened low-side Gallium Nitride (GaN) FET driver alongside the ISL70023SEH and ISL70024SEH enhancement mode GaN power transistors.
The ISL70040SEH is designed to drive enhancement mode GaN FETs in isolated... Read More
